Title :
Normally-closed, leak-tight piezoelectric microvalve under ultra-high upstream pressure for integrated micropropulsion
Author :
Eui-Hyeok Eh ; Lee, Choonsup ; Mueller, Juergen
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper presents a leak-tight piezoelectric microvalve, operating at extremely high upstream pressures for microspacecraft applications. The device is a normally-closed microvalve fabricated mostly by the micromachining of silicon wafers. The microvalve consists of a custom-designed piezoelectric stack actuator bonded onto silicon valve components, such as the seat, boss and tether, in a stainless steel housing. Major seating configurations include narrow edge seating rings and tensile-stressed silicon tethers that contribute to the desired normally-closed leak-tight operation. The microvalve operations have been demonstrated with a ´helium leak detector scale´ leak rate of 10-4 sccm at 800 psi. Dynamic microvalve operations of up to 1 kHz have been successfully demonstrated at the pressures in the range of 0∼1000 psi. The measured static flow rate of a microvalve with an applied potential of 10 V is 52 sccm at an inlet pressure of 300psi. The measured power consumption, to hold the microvalve seat fully open, is 3 mW with the applied potential of 30 V. The measured dynamic power consumption is 180 mW for 100 Hz continuous operation at 100 psi.
Keywords :
aerospace propulsion; micromachining; microvalves; piezoelectric devices; silicon; 0 to 1000 psi; 1 kHz; 10 V; 100 Hz; 180 mW; 3 mW; 30 V; Si; dynamic microvalve operation; integrated micropropulsion; micromachining; microspacecraft; piezoelectric microvalve; piezoelectric stack actuator; ultra-high upstream pressure; Energy consumption; Micromachining; Microvalves; Piezoelectric actuators; Power measurement; Pressure measurement; Silicon; Steel; Valves; Wafer bonding;
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
Print_ISBN :
0-7803-7744-3
DOI :
10.1109/MEMSYS.2003.1189692