Effect of optical excitation level on the MSM-detector high-speed response

Author

Averine, S.V. ; Kuznetzov, P.I.

Author_Institution

Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Fryazino

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

138

Lastpage

140

Abstract

High-speed response of the metal-semiconductor-metal (MSM) detectors is analyzed. Effect of optical excitation level on the MSM-photodetector performance is discussed. At low excitation level the detector speed of response is limited by parasitic capacitance of interdigitated diode structure and by the transit time of the photogenerated carriers. At high excitation level the detector speed of response is limited by the field screening caused by the space-charge of the holes. The impulse response of GaN MSM-detector is compared favorably with GaAs MSM-device.

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; metal-semiconductor-metal structures; photodetectors; transient response; GaAs; GaN; detector speed; field screening; impulse response; interdigitated diode structure; metal-semiconductor-metal detectors; optical excitation level; parasitic capacitance; photogenerated carriers; space-charge; the MSM-detector high-speed response; Delay; Detectors; Energy states; Fingers; Gallium nitride; High speed optical techniques; Lighting; Optical saturation; Optical sensors; Schottky diodes; Metal-semiconductor-metal (MSM) diode; high-speed response; optical excitation energy; photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrawideband and Ultrashort Impulse Signals, 2008. UWBUSIS 2008. 4th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-2738-3

Type

conf

DOI

10.1109/UWBUS.2008.4669385

Filename

4669385