DocumentCode :
3331865
Title :
Double-drift diodes for super wideband noise oscillator with increased noise level
Author :
Loshitski, P.P. ; Pavlyuchenko, A.V.
Author_Institution :
Nat. Tech. Univ. of Ukraine, Kiev
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
147
Lastpage :
149
Abstract :
50...70 dB/kT0 ENR levels are obtained during avalanche diode in anomaly mode based wideband noise oscillators research. Specially developed impulse method makes double-drift diodepsilas selection possible just as allows to determine drift region chargepsilas asymmetry for obtaining great ENR level.
Keywords :
avalanche diodes; impulse noise; oscillators; avalanche diode; charge asymmetry; double-drift diodes; impulse method; increased noise level; super wideband noise oscillator; Circuits; Diodes; Microwave frequencies; Microwave oscillators; Narrowband; Noise level; Plasma applications; Plasma immersion ion implantation; Ultra wideband technology; Voltage; ENR; anomaly mode; avalanche diode; p- and n- drift region’s asymmetry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrawideband and Ultrashort Impulse Signals, 2008. UWBUSIS 2008. 4th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-2738-3
Type :
conf
DOI :
10.1109/UWBUS.2008.4669388
Filename :
4669388
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3331865
بازگشت