DocumentCode
3331903
Title
A low loss MEMS transmission line with shielded ground
Author
Park, Eun-Chul ; Choi, Yun-Suk ; Kim, Byeong-Il ; Yoon, Jun-Bo ; Yoon, Euisik
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
136
Lastpage
139
Abstract
This paper reports a MEMS transmission line with shielded ground realized using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes. The fabricated transmission line has achieved extremely low loss by shielding the signal line from lossy silicon substrate at the bottom as well as from radiation into open air space above. A low loss of 0.35 dB/cm at 25 GHz has been achieved in the fabricated transmission lines.
Keywords
high-frequency transmission lines; micromechanical devices; 25 GHz; extremely low loss; fully CMOS compatible; lossy Si substrate; low loss MEMS transmission line; shielded ground; Conducting materials; Conductivity; Coplanar waveguides; Dielectric losses; Dielectric substrates; Distributed parameter circuits; Micromechanical devices; Propagation losses; Silicon; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189705
Filename
1189705
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