DocumentCode
3331912
Title
CMOS 0.18-μm integrated power amplifier for UWB systems
Author
Makarov, D.G. ; Krizhanovskii, V.V. ; Shu, Chang ; Krizhanovskii, V.G.
Author_Institution
Donetsk Nat. Univ., Donetsk
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
153
Lastpage
155
Abstract
A two-stage power amplifier for UWB systems transmitter was designed and simulated for implementing in standard 0.18-mum CMOS technology. Using cascode scheme and original biasing architecture allows to decrease a number of on-chip inductors and capacitors and simplify amplifier schematic. Amplifier can deliver 30 mW of output power with 48% efficiency in 4-5 GHz bandwidth with 1.8 supply voltage.
Keywords
CMOS integrated circuits; power amplifiers; ultra wideband communication; CMOS technology; UWB systems; cascode scheme; frequency 4 GHz to 5 GHz; integrated power amplifier; on-chip capacitors; on-chip inductors; power 30 mW; size 0.18 mum; voltage 1.8 V; Bandwidth; CMOS technology; Capacitors; Circuits; Frequency; Inductors; Parasitic capacitance; Power amplifiers; Ultra wideband technology; Voltage; CMOS; UWB; cascode; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrawideband and Ultrashort Impulse Signals, 2008. UWBUSIS 2008. 4th International Conference on
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4244-2738-3
Type
conf
DOI
10.1109/UWBUS.2008.4669390
Filename
4669390
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