A novel grounded coplanar waveguide with cavity structure

Author

Yoshida, Yukihisa ; Nishino, Tamotsu ; Jiao, Jiwei ; Lee, Sang-Seok ; Suehiro, Yoshiyuki ; Miyaguchi, Ken´ichi ; Fukami, Tatsuya ; Kimata, Masafumi ; Ishida, Osami

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan

fYear

2003

fDate

19-23 Jan. 2003

Firstpage

140

Lastpage

143

Abstract

This paper presents a grounded coplanar waveguide (GCPW), which is useful in RF-MEMS devices in order to effectively reduce noise from neighboring transmission lines. The GCPW structures demonstrated here were fabricated by front-surface-only processes on a single silicon wafer. A silicon nitride membrane supports the coplanar waveguide, which is located above a ground plane formed on an etched silicon cavity We found that the insertion losses of the 50-Ω GCPW´s with a 26-μm-wide signal line and a 6-μm-deep cavity do not exceed 0.4 dB/mm up to 20 GHz, which agreed with the simulated loss. The demonstrated maximum depth of metallized cavity is 30 μm, which enables the GCPW´s loss to be as low as 0.08 dB/mm at 20 GHz.

Keywords

coplanar waveguides; high-frequency transmission lines; micromechanical devices; 20 GHz; 26 micron; 30 micron; 50 ohm; 6 micron; RF-MEMS devices; Si; Si₃N₄; Si₃N₄ membrane; cavity structure; coplanar waveguide; front-surface-only processes; ground plane; grounded coplanar waveguide; insertion losses; neighboring transmission lines; single Si wafer; Biomembranes; Coplanar transmission lines; Coplanar waveguides; Etching; Ground support; Insertion loss; Noise reduction; Planar waveguides; Radiofrequency microelectromechanical systems; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-7744-3

Type

conf

DOI

10.1109/MEMSYS.2003.1189706

Filename

1189706