DocumentCode
3332018
Title
Effect of RF voltage non-uniformity on capacitive discharge
Author
Ohshita, T. ; Matsukuma, M. ; Kang, S.-Y. ; Sawada, I.
Author_Institution
Technol. Dev. Center, Tokyo Electron Ltd., Nirasaki, Japan
fYear
2010
fDate
20-24 June 2010
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Capacitively Coupled Plasma (CCP) using a very high frequency (VHF) has been developed to achieve high density plasm a and low ion bombardment energy. However, excitation with the higher frequency makes the standing wave effect more emphasis because of the relation between the RF wavelength a nd the reactor size.
Keywords
high-frequency discharges; plasma collision processes; plasma density; plasma simulation; Monte Carlo collision method; RF voltage nonuniform effect; RF wavelength; capacitive discharge; capacitively coupled plasma; high density plasma; low ion bombardment energy; particle-in-cell method; plasma emission; reactor size; standing wave effect; Electrodes; Electrons; Frequency measurement; Plasma density; Plasma measurements; Plasma sheaths; Plasma sources; Plasma waves; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2010 Abstracts IEEE International Conference on
Conference_Location
Norfolk, VA
ISSN
0730-9244
Print_ISBN
978-1-4244-5474-7
Electronic_ISBN
0730-9244
Type
conf
DOI
10.1109/PLASMA.2010.5534155
Filename
5534155
Link To Document