Title :
6.5 kV IGBT-modules
Author :
Auerbach, Franz ; Bauer, Josef Georg ; Glantschnig, M. ; Göttert, Jürgen ; Hierholzer, Martin ; Porst, Alfred ; Reznik, Daniel ; Schulze, Hans-Joachim ; Schutze, Thomas ; Spanke, Reinhold
Author_Institution :
Infineon Technol., Germany
Abstract :
Power control in applications with a line voltage of 3 kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device with several advantages compared to power semiconductors in thyristor structure (low requirements regarding the driving unit, easy cooling as a result of the isolated structure) is fully developed and introduced up to a blocking voltage range of 3.3 kV. Consequently, at the moment IGBT-technology can only be used by series connection of at least two IGBT-modules in these high voltage applications. This leads to several complications in driving, controlling and isolating the modules. With the development of 6.5 kV IGBT-modules, eupec makes a power semiconductor available, which combines the advantages of IGBT-technology with the high blocking voltage capability of GTOs and IGCTs without the problems of series connection
Keywords :
insulated gate bipolar transistors; modules; 6.5 kV; IGBT-modules; blocking voltage; cooling; driving unit; eupec; high blocking voltage capability; power control; power semiconductor; series connection; Circuit synthesis; Cooling; Diodes; Doping; Energy management; Insulated gate bipolar transistors; Power control; Technology management; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.805979
