A novel stress sensor based on the transverse pseudo-Hall effect of MOSFETs

This paper reports a novel stress sensor based on the transverse, i.e., pseudo-Hall response of metal oxide field effect transistor (MOSFET) devices to mechanical loads. In addition to source/drain contacts the MOSFETs investigated in this work feature additional perpendicular contacts to the channel region. Beside theoretical considerations, the paper covers experimental results of square MOSFETs with different lateral dimensions. Both NMOS and PMOS enhancement-mode devices are investigated. The dependence of the stress sensitivity on drain-source and gate-source voltages VDS and VGS was measured. Stress sensitivity coefficients Π_44,n and Π_44,p were extracted from these results.