• DocumentCode
    3333460
  • Title

    Sub-micron thick high sensitive piezoresistive cantilevers by boron etch stop and argon implantation

  • Author

    Gel, Murat ; Shimoyama, Isao

  • Author_Institution
    Shimoyama Lab., Univ. of Tokyo, Japan
  • fYear
    2003
  • fDate
    19-23 Jan. 2003
  • Firstpage
    494
  • Lastpage
    497
  • Abstract
    A new method far improving piezoresistive response of thin (<1 μm) cantilevers with Argon implantation is described. Argon implantation is used to damage atomic structure of one side of the cantilever. Test cantilevers have thickness of less than 500 nm while length and width is 60 μm and 30 μm respectively. For a total implanted dose of 35 × 1015 ions/cm2 maximum displacement sensitivity obtained is 8.24 × 10-7 [1/Å] which is 82% of the theoretical maximum. Force sensitivity is found to be 3.5 × 10-3 [1/μN].
  • Keywords
    argon; boron; displacement measurement; force measurement; ion implantation; microsensors; piezoelectric actuators; sputter etching; 1 micron; 30 micron; 500 nm; 60 micron; Ar implantation; B etch stop; maximum displacement sensitivity; sub-micron thick high sensitive piezoresistive cantilevers; total implanted dose; Amorphous materials; Argon; Boron; Conductivity; Etching; Fabrication; Force measurement; Piezoresistance; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7744-3
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2003.1189794
  • Filename
    1189794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3333460