DocumentCode :
3333460
Title :
Sub-micron thick high sensitive piezoresistive cantilevers by boron etch stop and argon implantation
Author :
Gel, Murat ; Shimoyama, Isao
Author_Institution :
Shimoyama Lab., Univ. of Tokyo, Japan
fYear :
2003
fDate :
19-23 Jan. 2003
Firstpage :
494
Lastpage :
497
Abstract :
A new method far improving piezoresistive response of thin (<1 μm) cantilevers with Argon implantation is described. Argon implantation is used to damage atomic structure of one side of the cantilever. Test cantilevers have thickness of less than 500 nm while length and width is 60 μm and 30 μm respectively. For a total implanted dose of 35 × 1015 ions/cm2 maximum displacement sensitivity obtained is 8.24 × 10-7 [1/Å] which is 82% of the theoretical maximum. Force sensitivity is found to be 3.5 × 10-3 [1/μN].
Keywords :
argon; boron; displacement measurement; force measurement; ion implantation; microsensors; piezoelectric actuators; sputter etching; 1 micron; 30 micron; 500 nm; 60 micron; Ar implantation; B etch stop; maximum displacement sensitivity; sub-micron thick high sensitive piezoresistive cantilevers; total implanted dose; Amorphous materials; Argon; Boron; Conductivity; Etching; Fabrication; Force measurement; Piezoresistance; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-7744-3
Type :
conf
DOI :
10.1109/MEMSYS.2003.1189794
Filename :
1189794
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3333460
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