Fabrication of a CMOS compatible pressure sensor for harsh environments

Author

Pakula, L.S. ; Yang, H. ; Pham, H.T.M. ; French, P.J. ; Sarro, P.M.

Author_Institution

DIMES-EI, Delft Univ. of Technol., Netherlands

fYear

2003

fDate

19-23 Jan. 2003

Firstpage

502

Lastpage

505

Abstract

This paper presents the fabrication and characteristics of CMOS compatible absolute pressure sensors for harsh environments. The sensor consist of 100 circle membranes with total capacity of 14 pF. Surface micromachining techniques were involved in fabrication of the sensor. Due to its good properties PECVD SiC, layers are used as mechanical layers. The stiction problems were avoided due to use of polyimide PI2610 as sacrificial layer. The pressure sensors were fabricated with change of capacitance of 3.4pF in full pressure range.

Keywords

micromachining; microsensors; plasma CVD coatings; pressure sensors; silicon compounds; stiction; 14 pF; 3.4 pF; CMOS compatible pressure sensor; SiC; characteristics; circle membranes; fabrication; harsh environments; polyimide P12610 sacrificial layer; stiction problems; surface micromachining techniques; total capacity; Biomembranes; Capacitance; Capacitive sensors; Fabrication; Mechanical factors; Mechanical sensors; Micromachining; Polyimides; Sensor phenomena and characterization; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-7744-3

Type

conf

DOI

10.1109/MEMSYS.2003.1189796

Filename

1189796