Title :
Microfabrication of gallium arsenide cantilever for atomic force microscope application
Author :
Iwata, Nobuya ; Wakayama, Takayuki ; Kobayashi, Toshinari ; Yamada, Syoji
Author_Institution :
Center for Nano Mater. & Technol., Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
Abstract :
Recently, several researchers have reported fabrications of cantilever based on various GaAs related bulk and hetrostructure materials. But the details of fabrication processes and of mechanical properties have not yet been reported so far. In this work, we report fabrication and estimation of full GaAs cantilever for use of scanning probe microscopy. The process was accomplished only by photo-lithography and two-kind wet chemical etching. As a result, almost one third of die samples had a perfect appearance as designed. For those samples, we made resonance frequency measurement by using laser vibrometer and found a good agreement with the calculation. We also tried atomic force microscopy (AFM) observations by using this cantilever and obtained equal images to those by commercial Si cantilever.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; micromachining; micromechanical resonators; GaAs; GaAs cantilever; atomic force microscope application; fabrication processes; laser vibrometer; mechanical properties; microfabrication; photo-lithography; resonance frequency measurement; scanning probe microscopy; wet chemical etching; Atomic force microscopy; Chemical lasers; Chemical processes; Frequency measurement; Gallium arsenide; Mechanical factors; Optical device fabrication; Resonance; Scanning probe microscopy; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
Print_ISBN :
0-7803-7744-3
DOI :
10.1109/MEMSYS.2003.1189808