DocumentCode
3334099
Title
Field-assisted bonding of glass to Si-Au eutectic solder for packaging applications
Author
Harpster, Timothy J. ; Najafi, Khalil
Author_Institution
Centerfor Wireless Integrated Microsystems, Michigan Univ., Ann Arbor, MI, USA
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
630
Lastpage
633
Abstract
A new approach for high-yield bonding of Pyrex 7740 glass to a silicon wafer using field-assisted glass to Si-Au eutectic bonding is presented. It is found that by applying an anodic bias, as is typically used in direct Si-glass wafer bonding, in a standard Si-Au eutectic bond, one can obtain a significant improvement in bond quality, uniformity, and reproducibility. Experimental results obtained from bonded silicon wafers and Pyrex 7740 glass wafers using silicon-gold eutectic solder on planar and non-planar surfaces are presented. Samples bonded at 410°C show bond strengths of >5.24MPa which falls within the range 2 to 25MPa reported for direct Si-Pyrex anodic bonding. Other samples bonded at 450°C show a bond strength >31.4MPa.
Keywords
adhesion; eutectic alloys; glass; gold alloys; integrated circuit packaging; silicon alloys; soldering; 410 degC; 450 degC; Pyrex 7740 glass; Si; Si-Au eutectic solder; SiAu; SiO2; bond strength; field-assisted bonding; high-yield bonding; packaging; silicon wafers; Bonding forces; Electrostatics; Glass; Gold; Packaging; Reproducibility of results; Silicon; Temperature sensors; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189828
Filename
1189828
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