DocumentCode :
3334158
Title :
Computer modelling of charging and polarization phenomena in dielectrics
Author :
Koikou, Serguej N.
Author_Institution :
St. Petersburg State Tech. Univ., Russia
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
311
Lastpage :
316
Abstract :
Author developed a block of programs for computer modelling of charge storage and relaxation, effect of charge transport in dielectrics, taking into account the nature of contacts between electrodes and dielectric, the interfacial phenomena, the processes of trapping and recombination of charge carriers. The theoretical results are discussed and compared with some experimental data
Keywords :
dielectric polarisation; dielectric relaxation; electron traps; electron-hole recombination; carrier recombination; carrier trapping; charge relaxation; charge storage; charge transport; computer model; dielectric; electrode contact; interfacial phenomena; polarization; Boundary conditions; Charge carrier processes; Charge carriers; Clouds; Computer interfaces; Dielectric breakdown; Differential equations; Electric breakdown; Electrodes; Polarization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578089
Filename :
578089
Link To Document :
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