DocumentCode
3334276
Title
Focused ion beam (FIB) nano-machining and FIB Moire technique for strain analysis in MEMS/NEMS structures and devices
Author
Li, Biao ; Tang, Xiaosong ; Xie, Huimin ; Zhang, Xin
Author_Institution
Sch. of NanoSciences & NanoEngineering, Albany, NY, USA
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
674
Lastpage
677
Abstract
The accurate determination of residual strain/stress in thin films is especially important in the emerging field of MEMS/NEMS. In this paper, a focused ion beam (FIB) Moire method is proposed and demonstrated to measure residual strain/stress in microstructures. This technique is based on advantages of the FIB system in nano-machining, in-situ deposition, imaging, and fine adjustment. A nano-grating is directly written on the top of the microstructures by ion milling without any etch mask; the FIB Moire pattern is formed by the interference between a prepared specimen grating and raster scan lines. Since the local strain of a microstructure itself can be monitored during the process, the FIB Moire technique has many potential applications in the mechanical metrology of MEMS.
Keywords
focused ion beam technology; internal stresses; micromachining; micromechanical devices; moire fringes; strain measurement; FIB Moire technique; FIB nano-machining; MEMS/NEMS devices; MEMS/NEMS structures; ion milling; nano-grating; residual strain; strain analysis; thin films; Capacitive sensors; Focusing; Ion beams; Micromechanical devices; Microstructure; Nanoelectromechanical systems; Nanoscale devices; Residual stresses; Strain measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189839
Filename
1189839
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