DocumentCode :
3334293
Title :
Mechanical properties of compressively prestressed thin films extracted from pressure dependent ripple profiles of long membranes
Author :
Kramer, Torsten ; Paul, Oliver
Author_Institution :
Inst. for Microsystem Technol., Freiburg Univ., Germany
fYear :
2003
fDate :
19-23 Jan. 2003
Firstpage :
678
Lastpage :
681
Abstract :
We report the determination of mechanical properties of compressively prestressed thin films from the postbuckling behavior of long rectangular membranes under differential pressure. Such structures show buckling profiles with ripples of pressure-dependent wavelength λ and amplitude Δw. At sufficiently high loads they undergo a symmetry transition to a ripple-free deflection profile. A model based on the energy minimization method (EMM) was developed to describe the mechanical behavior of these compressively prestressed membranes. For this purpose a new set of trial functions was constructed enabling the complex behavior including the symmetry transition to be described. Values for Young´s modulus E and the prestrain ε0 can be extracted from the comparison of experimental load-deflection data and EMM simulations. The model was applied to ripple data of a PECVD silicon nitride. Young´s modulus and the prestrain were found to be E=160 GPa and ε0=-7.0×10-4 respectively.
Keywords :
Young´s modulus; buckling; insulating thin films; micromechanical devices; silicon compounds; tensile strength; PECVD Si3N4; Si3N4; Young´s modulus; compressively prestressed thin films; energy minimization method; long membranes; mechanical properties; postbuckling behavior; pressure dependent ripple profiles; ripple-free deflection profile; symmetry transition; trial functions; Biomembranes; Etching; Frequency; Laboratories; Mechanical factors; Micromechanical devices; Minimization methods; Silicon compounds; Stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-7744-3
Type :
conf
DOI :
10.1109/MEMSYS.2003.1189840
Filename :
1189840
Link To Document :
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