DocumentCode :
33343
Title :
A Material Framework for Beyond-CMOS Devices
Author :
Galatsis, Kos ; Ahn, Charles ; Krivorotov, Ilya ; Kim, Philip ; Lake, Roger ; Wang, Kang L. ; Chang, Jane P.
Author_Institution :
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA, USA
Volume :
1
fYear :
2015
fDate :
Dec. 2015
Firstpage :
19
Lastpage :
27
Abstract :
Beyond-CMOS devices concepts are greatly dependent on new functional materials to provide inspiration and innovation beyond the silicon status quo. Here, we propose a material framework specifically for beyond-CMOS devices. In doing so, material system examples and data points presented are taken from the Center on Functional Accelerated Nanomaterials Engineering, the STARnet Center of Excellence.
Keywords :
CMOS integrated circuits; Couplings; Magnetic domains; Magnetoelectric effects; Magnetostriction; Perpendicular magnetic anisotropy; Beyond CMOS; beyond CMOS; nanodevices; nanoelectronics; nanomaterials;
fLanguage :
English
Journal_Title :
Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on
Publisher :
ieee
ISSN :
2329-9231
Type :
jour
DOI :
10.1109/JXCDC.2015.2424832
Filename :
7089215
Link To Document :
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