Title :
Total Ionizing Dose Effects and Bias Dependence in Selected Bipolar Devices
Author :
Chavez, R.M. ; Rax, B.G. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
Total dose test results are presented for two high-voltage transistors and three bipolar integrated circuits. Circuit tests were done at a dose rate of 0.005 rad(Si)/s because the devices are sensitive to enhanced damage at low dose rate (ELDRS). An unusual response was observed for one operational amplifier where the sign of the input bias current reversed after it was exposed to approximately 10 krad(Si) at low dose rate
Keywords :
bipolar integrated circuits; operational amplifiers; power bipolar transistors; radiation hardening (electronics); bias ionizing dependence; bipolar devices; enhanced damage; high-voltage transistors; low dose rate; operational amplifier; three bipolar integrated circuits; total ionizing dose effects; Bipolar integrated circuits; Circuit testing; Degradation; Doping; Integrated circuit testing; Manufacturing; Operational amplifiers; Pulse amplifiers; Space vehicles; Voltage; ELDRS; Total dose damage; bipolar devices; radiation effects;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295467
