• DocumentCode
    3334438
  • Title

    Proton Tolerance of InAs Based HEMT and DHBT Devices

  • Author

    Currie, Steven M. ; Harff, Nathan E. ; Pittelkow, Robert G. ; Marshall, Paul W. ; Bergman, Joshua ; Brar, Berinder ; Hacker, Jonathan B. ; Gutierrez, Augusto ; Monier, Cedric ; Gilbert, Barry K. ; Daniel, Erik S.

  • Author_Institution
    Mayo Clinic, Rochester, MN
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    66
  • Lastpage
    71
  • Abstract
    The paper presents measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In0.86Ga0.14As base 6.0 Aring lattice constant double heterojunction bipolar transistor (DHBT) devices
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; radiation hardening (electronics); wide band gap semiconductors; 6 angstrom; DHBT; HEMT; In0.86Ga0.14As; InAs-AlSb; antimonide compound semiconductor; double heterojunction bipolar transistor; high electron mobility transistors; lattice constant; proton tolerance; Computer hacking; DH-HEMTs; HEMTs; Lattices; MODFETs; Molecular beam epitaxial growth; Probes; Protons; Space technology; Testing; Antimonide-based compound semiconductor (ABCS); InAs; Proton tolerance; heterojunction bipolar transistor (HBT); high electron mobility transistor (HEMT);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2006 IEEE
  • Conference_Location
    Ponte Vedra, FL
  • Print_ISBN
    1-4244-0638-2
  • Type

    conf

  • DOI
    10.1109/REDW.2006.295470
  • Filename
    4077284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3334438