• DocumentCode
    333449
  • Title

    Validation and verification of the simulation model of a photolithography process in semiconductor manufacturing

  • Author

    Nayani, Nirupama ; Mollaghasemi, Mansooreh

  • Author_Institution
    Cirent Semicond., Orlando, FL, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    13-16 Dec 1998
  • Firstpage
    1017
  • Abstract
    Simulation modeling provides an effective and powerful approach for capturing and analyzing complex manufacturing systems. More and more decisions are based on computer generated data derived from simulation. The strength of these decisions is a direct function of the validity of this data. Thus the need for efficient and objective methods to verify and validate simulation models is greater than ever. The validation of a simulation is generally acknowledged as an integral part of a simulation project, but in a vast majority of the reported applications of simulation there is no mention of verification and validation. In this paper, the issue of formal verification and validation of a semiconductor manufacturing simulation model is addressed. A simulation model of the photo area of the clean room of Cirent Semiconductor in Orlando, Florida was built. Various approaches for verification and validation were applied and a valid semiconductor manufacturing simulation model was developed
  • Keywords
    clean rooms; computer integrated manufacturing; digital simulation; formal verification; photolithography; semiconductor device manufacture; Cirent Semiconductor; clean room; complex manufacturing systems; computer generated data; formal verification; photolithography process; semiconductor manufacturing; simulation validation; Application specific integrated circuits; Circuit simulation; Computational modeling; Engineering management; Lithography; Power system modeling; Semiconductor device manufacture; Semiconductor device modeling; Testing; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation Conference Proceedings, 1998. Winter
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-5133-9
  • Type

    conf

  • DOI
    10.1109/WSC.1998.745835
  • Filename
    745835