DocumentCode
3334496
Title
Comparative study on the effects of PVT variations between a novel all-MOS current reference and alternative CMOS solutions
Author
Windels, Jindrich ; Van Praet, C. ; De Pauw, Herbert ; Doutreloigne, Jan
Author_Institution
CMST, Ghent Univ., Ghent, Belgium
fYear
2009
fDate
2-5 Aug. 2009
Firstpage
49
Lastpage
53
Abstract
Sensitivity to supply voltage, temperature and process variations of a number of current reference topologies and a novel circuit is compared in ON Semi I3T80 technology. The novel current reference shows the lowest process dependency, while supply and temperature dependency remain acceptably low.
Keywords
CMOS integrated circuits; ON Semi I3T80 technology; PVT variations; all-MOS current reference; alternative CMOS solutions; CMOS technology; Circuit optimization; Circuit simulation; Circuit topology; Integrated circuit technology; Silicon; Space technology; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location
Cancun
ISSN
1548-3746
Print_ISBN
978-1-4244-4479-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2009.5236154
Filename
5236154
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