Title :
Experimental study of spore etching of microorganisms in oxygen plasma using optical and mass spectroscopy
Author :
Zhao, Y. ; Motrescu, I. ; Ogino, A. ; Nagatsu, M. ; Popa, G.
Author_Institution :
Grad. Sch. of Sci. & Technol., Shizuoka Univ., Shizuoka, Japan
Abstract :
Summary form only given. Utilizing plasma to achieve sterilization is an alternative to conventional sterilization means as far as sterilization of heat-sensitive materials and innocuity of sterilizing agents are concerned. Plasma sterilization is a surface sterilization process due to the limited ability of electrons and charged particles and/or VUV/UV emission generated during the plasma generation. However, plasma sterilization has the remarkable advantage that toxic residues are not produced on the sterilized objects after treatments. In addition, it is not only capable of killing bacteria and viruses, but also capable of removing the dead bacteria and viruses from the surface of the objects being sterilized. There are several mechanisms which may be responsible for the sterilization. These factors are the heat, UV radiation, plasma particles, and reactive neutral species. The extent of the influence of each factor depends on the plasma operating parameters such as power and gas mixture and flow rate. In our previous work, a six-log reduction in spores could be achieved only several minutes irradiation with low-pressure oxygen/air simulated surface-wave plasmas and the chemical etching reaction from the reactive oxygen radicals make more efficient inactivation rate [1-2]. In this work, we follow up to the previous studies[3-4], in order to investigate the contribution of various effects, especially the etching phenomena by the reactive oxygen radicals in the inactivation of spore forming bacteria. The experimental setup used for the sterilization tests consists of a stainless steel cylindrical vacuum chamber having a diameter of 400 mm and a height of 400 mm with a microwave launcher and 2.45 GHz microwave generator. The plasma is produced at a pressure of 13 Pa and a total gas flow of 200sccm by a microwave power source. The quadrupole mass spectroscopy and optical emission spectroscopy were used to diagnose the plasma parameters during plasma treatment of mic- oorganisms.
Keywords :
gas mixtures; microorganisms; oxygen; plasma applications; plasma diagnostics; plasma flow; plasma pressure; plasma sources; sputter etching; sterilisation (microbiological); O2; UV emission; UV radiation; VUV emission; chemical etching reaction; etching phenomena; frequency 2.45 GHz; gas mixture; heat radiation; heat-sensitive materials; low-pressure oxygen; microorganism; microwave generator; microwave power source; optical emission spectroscopy; plasma generation; plasma operating parameter; plasma sterilization; pressure 13 Pa; quadrupole mass spectroscopy; reactive neutral species; reactive oxygen radicals; size 400 mm; spore forming bacteria inactivation; stainless steel cylindrical vacuum chamber; surface sterilization process; total gas flow rate; virus; Electromagnetic heating; Etching; Fungi; Mass spectroscopy; Microorganisms; Plasma applications; Plasma diagnostics; Plasma materials processing; Plasma simulation; Plasma sources;
Conference_Titel :
Plasma Science, 2010 Abstracts IEEE International Conference on
Conference_Location :
Norfolk, VA
Print_ISBN :
978-1-4244-5474-7
Electronic_ISBN :
0730-9244
DOI :
10.1109/PLASMA.2010.5534312