DocumentCode
3334557
Title
Single Event Upset Characterization of the Virtex-4 Field Programmable Gate Array Using Proton Irradiation
Author
Hiemstra, David M. ; Chayab, Fayez ; Mohammed, Zaeem
Author_Institution
MDA, Brampton, Ont.
fYear
2006
fDate
38899
Firstpage
105
Lastpage
108
Abstract
Proton induced SEU cross-sections of functional blocks and the SRAM which stores the logic configuration of the Virtex-4 FPGA are presented. Upset rates in the space radiation environment are estimated
Keywords
SRAM chips; field programmable gate arrays; proton effects; radiation hardening (electronics); SRAM; Virtex-4 FPGA; Virtex-4 field programmable gate array; logic configuration; proton irradiation; single event upset characterization; Circuit testing; Field programmable gate arrays; Hardware; Logic devices; Logic testing; Programmable logic arrays; Protons; Random access memory; Single event upset; Telephony; SRAM FPGA; proton irradiation; single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295476
Filename
4077290
Link To Document