• DocumentCode
    3334557
  • Title

    Single Event Upset Characterization of the Virtex-4 Field Programmable Gate Array Using Proton Irradiation

  • Author

    Hiemstra, David M. ; Chayab, Fayez ; Mohammed, Zaeem

  • Author_Institution
    MDA, Brampton, Ont.
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    Proton induced SEU cross-sections of functional blocks and the SRAM which stores the logic configuration of the Virtex-4 FPGA are presented. Upset rates in the space radiation environment are estimated
  • Keywords
    SRAM chips; field programmable gate arrays; proton effects; radiation hardening (electronics); SRAM; Virtex-4 FPGA; Virtex-4 field programmable gate array; logic configuration; proton irradiation; single event upset characterization; Circuit testing; Field programmable gate arrays; Hardware; Logic devices; Logic testing; Programmable logic arrays; Protons; Random access memory; Single event upset; Telephony; SRAM FPGA; proton irradiation; single event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2006 IEEE
  • Conference_Location
    Ponte Vedra, FL
  • Print_ISBN
    1-4244-0638-2
  • Type

    conf

  • DOI
    10.1109/REDW.2006.295476
  • Filename
    4077290