DocumentCode :
3334557
Title :
Single Event Upset Characterization of the Virtex-4 Field Programmable Gate Array Using Proton Irradiation
Author :
Hiemstra, David M. ; Chayab, Fayez ; Mohammed, Zaeem
Author_Institution :
MDA, Brampton, Ont.
fYear :
2006
fDate :
38899
Firstpage :
105
Lastpage :
108
Abstract :
Proton induced SEU cross-sections of functional blocks and the SRAM which stores the logic configuration of the Virtex-4 FPGA are presented. Upset rates in the space radiation environment are estimated
Keywords :
SRAM chips; field programmable gate arrays; proton effects; radiation hardening (electronics); SRAM; Virtex-4 FPGA; Virtex-4 field programmable gate array; logic configuration; proton irradiation; single event upset characterization; Circuit testing; Field programmable gate arrays; Hardware; Logic devices; Logic testing; Programmable logic arrays; Protons; Random access memory; Single event upset; Telephony; SRAM FPGA; proton irradiation; single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
Type :
conf
DOI :
10.1109/REDW.2006.295476
Filename :
4077290
Link To Document :
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