DocumentCode :
3334583
Title :
Single Event Effects Test Results for Advanced Field Programmable Gate Arrays
Author :
Allen, Gregory R. ; Swift, Gary M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear :
2006
fDate :
38899
Firstpage :
115
Lastpage :
120
Abstract :
Reconfigurable field programmable gate arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turn application specific integrated circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about 1times10-6 cm2/bit for storing ones and about 1times10-7 cm2/bit for storing zeros. Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques
Keywords :
application specific integrated circuits; field programmable gate arrays; flip-flops; radiation hardening (electronics); ASIC; FPGA; HardCopy II; LET threshold; ProASIC device; Stratix II; application specific integrated circuit; design-level flip-flops; field programmable gate arrays; heavy ions; single event effects; single event testing; triple modular redundancy mitigation techniques; Application specific integrated circuits; Circuit testing; Field programmable gate arrays; Integrated circuit testing; Laboratories; Nonvolatile memory; Propulsion; Space technology; Switches; Voltage; ASICs; Field Programmable Gate Arrays; Single Event Latchup; Single Event Upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
Type :
conf
DOI :
10.1109/REDW.2006.295478
Filename :
4077292
Link To Document :
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