Title :
Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node
Author :
Ladbury, R. ; Berg, M.D. ; Kim, H. ; LaBel, K. ; Friendlich, M. ; Koga, R. ; George, J. ; Crain, S. ; Yu, P. ; Reed, R.A.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD
Abstract :
We present single event effect (SEE) and total ionizing dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer
Keywords :
CMOS integrated circuits; DRAM chips; SRAM chips; radiation hardening (electronics); 1 Gbit; 90 nm; CMOS technology node; DDR SDRAM; radiation performance; single event effect; total ionizing dose; Aerospace engineering; Aerospace testing; CMOS technology; Cyclotrons; DRAM chips; NASA; Packaging; Space technology; System testing; Test facilities; quality assurance; radiation effects; reliability estimation;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295480
