DocumentCode :
3334716
Title :
Single Event Transients (SETs) in the RH108 Operational Amplifier in Analog Circuits
Author :
Chavez, Rosa M. ; Scheick, Leif Z. ; Miyahira, Tetsuo F. ; Johnston, Allan H.
Author_Institution :
Jet Propulsion Lab., NASA, Pasadena, CA
fYear :
2006
fDate :
38899
Firstpage :
154
Lastpage :
159
Abstract :
The effects of various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons
Keywords :
analogue circuits; insulated gate bipolar transistors; operational amplifiers; protons; radiation hardening (electronics); BJT; IGBT; RH108 operational amplifier; analog circuits; heavy ions; power devices; protons; radiation hardening; single event effects; single event transients; Analog circuits; Circuit testing; Laboratories; NASA; Operational amplifiers; Propulsion; Protons; Regulators; Space technology; Voltage; BJT; IGBT; heavy ions; protons; radiation; switch; transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
Type :
conf
DOI :
10.1109/REDW.2006.295485
Filename :
4077299
Link To Document :
بازگشت