DocumentCode
3334805
Title
Determination of High Energy Neutron Voltage Stress Margins for High Voltage IGBT and Diode Pairs from Two Manufacturers using Energetic Particle Induced Charge Spectroscopy, EPICS
Author
Edwards, Robert ; Woodhouse, John
fYear
2006
fDate
38899
Firstpage
172
Lastpage
176
Abstract
The use of high voltage [above 200V] electronic IGBT drives is increasing. To avoid destructive SEB of high voltage devices in the atmospheric neutron radiation environment, derating is recommended. The EPICS method is used to investigate actual IGBT and diode voltage stress margins for 2 manufacturers, both below and at SEB
Keywords
avionics; insulated gate bipolar transistors; neutron effects; power integrated circuits; power semiconductor diodes; radiation hardening (electronics); EPICS; atmospheric neutron radiation; diode pairs; electronic IGBT drives; energetic particle induced charge spectroscopy; high energy neutron voltage stress margins; high voltage devices; high voltage integrated circuit; single event burnout; Aerospace electronics; Diodes; Insulated gate bipolar transistors; Manufacturing; Neutrons; Spectroscopy; Stress; Test equipment; Testing; Voltage; EPICS; IGBT; SEB; Single Event Burnout; atmospheric radiation; derating; high voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295488
Filename
4077302
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