Title :
Analyses of structure design and Ids nonlinear modeling for 5-watt multi-cell microwave GaAs MESFET
Author :
Gao, YiFan ; Gu, Cong
Author_Institution :
Xian Highway Univ., Shaanxi, China
Abstract :
The characteristics are described for a GaAs MESFET with 5-watt large-gate-width multi-cell structure, including optimal structure design, processes and high breakdown voltage and overcurrent capacity. Also, we propose a modified Ids nonlinear model, and the agreement with experiment using this typical model was better than the results given by directly employing the common models
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device breakdown; semiconductor device models; 5 W; GaAs; high breakdown voltage; large-gate-width structure; microwave GaAs MESFET; modified Ids nonlinear model; multi-cell power MESFET; optimal structure design; overcurrent capacity; structure design analysis; Electron beams; Gallium arsenide; Intrusion detection; MESFETs; Microwave FETs; Microwave devices; Predictive models; Semiconductor device modeling; Threshold voltage; Wafer bonding;
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Services, 1999. 4th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5768-X
DOI :
10.1109/TELSKS.1999.806239
