• DocumentCode
    3335614
  • Title

    Current status and prospects of FET-type ferroelectric memories

  • Author

    Ishiwara, H.

  • Author_Institution
    Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    1999
  • fDate
    23-23 June 1999
  • Firstpage
    6
  • Lastpage
    9
  • Abstract
    In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET) arrays for applying to a single-transistor-cell-type digital memory and to a synaptic connection circuit in an artificial neural network are first introduced. Then, current status of the experimental studies on MF(MI)S (I: insulator) capacitors and FETs is presented and finally prospects of FET-type ferroelectric memory are discussed.
  • Keywords
    MISFET; ferroelectric storage; FET-type ferroelectric memory; MFSFET array; artificial neural network; single-transistor-cell-type digital memory; synaptic connection circuit; Capacitors; Electrodes; FETs; Ferroelectric films; Ferroelectric materials; Insulation; Nonvolatile memory; Polarization; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 1999 57th Annual
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-5170-3
  • Type

    conf

  • DOI
    10.1109/DRC.1999.806306
  • Filename
    806306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3335614