Title :
AlGaN/GaN microwave power HEMTs
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
AlGaN/GaN HEMTs on sapphire and SiC substrates have strong advantages over other microwave power transistors. High breakdown voltage, high average power, and high efficiency have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN microwave power HEMT; SiC substrate; average power; breakdown voltage; efficiency; sapphire substrate; Aluminum gallium nitride; Buffer layers; Electron mobility; Gallium nitride; Gold; HEMTs; Nickel; Piezoelectric polarization; Silicon carbide; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806307
