DocumentCode
3335626
Title
AlGaN/GaN microwave power HEMTs
Author
Eastman, L.F.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
10
Lastpage
13
Abstract
AlGaN/GaN HEMTs on sapphire and SiC substrates have strong advantages over other microwave power transistors. High breakdown voltage, high average power, and high efficiency have been obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN microwave power HEMT; SiC substrate; average power; breakdown voltage; efficiency; sapphire substrate; Aluminum gallium nitride; Buffer layers; Electron mobility; Gallium nitride; Gold; HEMTs; Nickel; Piezoelectric polarization; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806307
Filename
806307
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