Title :
A bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs
Author :
Subramanian, V. ; Kedzierski, J. ; Lindert, Nick ; Tam, H. ; Su, Y. ; McHale, J. ; Cao, K. ; King, T.-J. ; Bokor, J. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A novel method of forming 80 nm gate length ultrathin-body SOI MOSFETs has been presented. Lateral solid-phase epitaxy of a deposited amorphous Si film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with on-chip bulk devices.
Keywords :
MOSFET; silicon-on-insulator; solid phase epitaxial growth; Si; amorphous Si film; lateral solid phase epitaxy; short channel effect; ultrathin-body SOI MOSFET; Amorphous materials; Amorphous silicon; Crystallization; Epitaxial growth; Etching; Fabrication; Immune system; Implants; MOSFETs; Semiconductor films;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806312
