• DocumentCode
    3335738
  • Title

    High suppression of the short-channel effect in ultrathin SOI n-MOSFETs

  • Author

    Suzuki, E. ; Ishii, K. ; Kanemaru, S. ; Maeda, T. ; Sekigawa, T. ; Nagai, K. ; Tsutsumi, T. ; Hiroshima, H.

  • Author_Institution
    Electrotech. Lab., Ibaraki, Japan
  • fYear
    1999
  • fDate
    23-23 June 1999
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    High suppression of threshold voltage roll-off and subthreshold slope characteristics have been experimentally shown in ultrathin SOI n-MOSFETs in the 40-135 nm gate length regime, and the effectiveness of an ultrathin SOI layer to prevent the short channel effect was experimentally confirmed.
  • Keywords
    MOSFET; silicon-on-insulator; 40 to 135 nm; short channel effect; subthreshold slope; threshold voltage roll-off; ultrathin SOI n-MOSFET; Circuit simulation; Degradation; Epitaxial layers; Fabrication; Laboratories; Lithography; MOSFET circuits; Safety; Threshold voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 1999 57th Annual
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-5170-3
  • Type

    conf

  • DOI
    10.1109/DRC.1999.806314
  • Filename
    806314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3335738