Title :
Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors
Author :
Xu, Wei ; Goel, A.K.
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
Abstract :
The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET. The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of high-speed circuits
Keywords :
delays; electronic engineering computing; equivalent circuits; high electron mobility transistors; semiconductor device models; CAD oriented software; HEMT; MODFET; computer-efficient algorithm; field-effect transistors; high-speed circuits; modulation-doped heterojunction; optimization; propagation delay; transverse delays; Capacitance; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Inductance; MODFET circuits; Propagation delay; Voltage;
Conference_Titel :
VLSI, 1991. Proceedings., First Great Lakes Symposium on
Conference_Location :
Kalamazoo, MI
Print_ISBN :
0-8186-2170-2
DOI :
10.1109/GLSV.1991.143988
