Title :
GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates and their application to highly efficient surface acoustic wave convolver
Author :
Kuze, N. ; Goto, H. ; Kanno, Y. ; Tsunashima, M. ; Yamagata, Y. ; Yamanouchi, Kazuhiko
Author_Institution :
Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan
Abstract :
Presents for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO/sub 3/ substrates by molecular beam epitaxy and their application to a novel strip-coupled surface acoustic wave (SAW) convolver. High efficiencies of more than -14 dBm have been obtained by using the GaSb/InSb/AlGaAsSb heterostructures and the new electrode design of the SAW convolver. In the spread spectrum communication system, the highly efficient SAW convolver opens up the possibility for a high performance and low power consumption demodulator of the receiver.
Keywords :
III-V semiconductors; aluminium compounds; demodulators; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; spread spectrum communication; surface acoustic wave convolution; surface acoustic wave devices; GaSb-InSb-AlGaAsSb; LiNbO/sub 3/; demodulator; electrode design; molecular beam epitaxy; power consumption; spread spectrum communication system; strip-coupled surface acoustic wave device; surface acoustic wave convolver; Acoustic waves; Convolution; Convolvers; Electrodes; Laboratories; Radio frequency; Semiconductor films; Strips; Substrates; Surface acoustic waves;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806321
