First vertical PNP bipolar transistor structure on diamond

The application of nitrogen doped diamond in electronics is demonstrated by fabricating pnp bipolar transistors on diamond with nitrogen doped base for the first time. The transistor structures were fabricated by epitaxial growth on p-type diamond crystal substrate by using boron and nitrogen as the p- and n-dopants respectively, The electrical characteristics and numerical simulation of the transistors taking into account the deep donors are presented.