A nanoscale ohmic contact for nanoelectronic devices

Author

Janes, D.B. ; Andres, R.P. ; Chen, E.-H. ; Chen, N.-P. ; Reifenberger, R. ; Lee, T. ; Jia Liu ; Melloch, M.R. ; Ueng, H.J. ; Woodall, J.M.

Author_Institution

Purdue Univ., West Lafayette, IN, USA

fYear

1999

fDate

23-23 June 1999

Firstpage

60

Lastpage

61

Abstract

In this presentation, we report the development and characterization of low-resistance nanometer scale ohmic contacts which provide suitable characteristics for application in nanoelectronic semiconductor devices. The nanocontact structure employs a heterostructure comparable to that used in previous large-area studies of a low resistance, non-alloyed ohmic contact, namely a thin (2-10 nm) cap layer of low-temperature grown GaAs (LTG:GaAs) on a heavily doped n-type GaAs layer.

Keywords

III-V semiconductors; gallium arsenide; nanotechnology; ohmic contacts; GaAs; heavily doped n-type GaAs layer; heterostructure; low-temperature grown GaAs cap layer; nanoelectronic semiconductor device; nanoscale ohmic contact; nonalloyed ohmic contact; Contact resistance; Current measurement; Density measurement; Electrical resistance measurement; Gallium arsenide; Gold; Nanoscale devices; Ohmic contacts; Surface resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806323

Filename

806323