Title :
Micromachined pressure sensors with Al/sub x/Ga/sub 1-x/As/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes
Author :
Mutamba, K. ; Sigurdardottir, A. ; Vogt, A. ; Pfeiffer, J. ; Behner, U. ; Di Carlo, A. ; Hartnagel, H.L.
Author_Institution :
Inst. fuer Hochfrequenztech., Tech. Univ. Darmstadt, Germany
Abstract :
We report on the development of micromachined pressure sensors utilizing uniaxial pressure effects in resonant tunneling diodes (RTDs) made from the material systems Al/sub x/Ga/sub 1-x/As/GaAs and InAs/AlSb/GaSb. High stress sensitivities with K-Factors (relative change of the RTD voltage or current in dependence of the strain) ranging between 130 and 1400 are combined with the etching selectivity of the different materials to produce membrane structures.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; gallium compounds; indium compounds; membranes; micromachining; microsensors; pressure sensors; resonant tunnelling diodes; AlGaAs-GaAs; InAs-AlSb-GaSb; K-factor; etching; membrane; micromachining; pressure sensor; resonant tunneling diode; stress sensitivity; Biomembranes; Capacitive sensors; Diodes; Etching; Gallium arsenide; Pressure effects; Resonant tunneling devices; Sensor systems; Stress; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806325
