Silicon quantum dots in a MOSFET structure: level structure

We have fabricated silicon quantum dot devices based on a dual gate technique in a silicon MOS technology. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot. Hence, the dot is located between the source and drain of a long channel MOSFET. Here, we report on the dependence of the charging of the dot with variation in the top gate, as well as a study of the magnetic field effect on the energy level structure.