Title :
Epitaxially-stacked multiple-active-region 1.55 /spl mu/m CW lasers for increased differential efficiency
Author :
Kim, J.K. ; Hall, E. ; Sjolund, O. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Semiconductor CW lasers with external differential efficiencies >1 have been created by monolithically connecting several active regions in series within a single optical waveguide. This task has been accomplished at the technologically important 1.55/spl mu/m wavelength. This is achieved by epitaxially stacking a number of p-i-n multi-quantum well active regions with intermediate n/sup ++/-p/sup ++/ back-diodes, which enable the entire terminal current to flow through each active region stage in series. Such lasers should also improve impedance match as well as provide for low-noise, high-efficiency microwave links.
Keywords :
impedance matching; optical waveguides; quantum well lasers; semiconductor epitaxial layers; 1.55 micrometre; CW lasers; active region stage; differential efficiency; high-efficiency microwave links; impedance match; intermediate n/sup ++/-p/sup ++/ back-diodes; multiple-active-region lasers; p-i-n multi-quantum well regions; single optical waveguide; terminal current; Electrons; Laser modes; Laser theory; Optical losses; Optical scattering; Quantum cascade lasers; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806337
