Vertical cavity blue InGaN/GaN MQW light emitting devices using substrate separation and substrate transfer techniques

Reports a new method for fabricating III-nitride vertical cavity light emitting devices using laser induced substrate separation (LISS) and electrolytic substrate transfer techniques. As a demonstration, we illustrate two types of structures: (a) a high-Q optical resonator structure with dielectric DBR stacks suitable for optically pumped VCSEL operation, and (b) a vertical injection LED with an asymmetric cavity formed by a metallic mirror and a single dielectric DBR stack. Both structures have been designed and fabricated from OMVPE grown InGaN/GaN MQW heterostructure material grown on sapphire substrates.