Comparison of two different methods to produce thin-window silicon drift detectors

We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1×10¹⁴/cm² at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4×1012/cm² at 50 keV or dose of 9×1011/cm² at 80 keV) through 500 ¿ of silicon dioxide. The second Phosphorus implantation compensates for the tail portion of the Boron ion implantation, so that the net Boron ion distribution will result in a thinner ¿dead¿ silicon layer and an elevated electric field near the silicon surface. We will compare test results from this newly developed thin-window with those from our previous development, where the thin junction was created using a single implantation of Boron ions (dose of 1×10¹⁴/cm² at 10 keV) through a 500 ¿ thick silicon dioxide. All testing was done in the U3C beam line at the National Synchrotron Light Source at Brookhaven National Laboratory.