Title :
4H-SiC continuous wave SITs
Author :
Siergiej, R.R. ; Bojko, R.J. ; Clarke, R.C. ; Curtice, W.R.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Pittburgh, PA, USA
Abstract :
4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR applications. In current SIT designs the footprint of the device dictates both gate to drain capacitance and the power density. Consequently for common source circuits there is a trade-off between high frequency response-which calls for low gate to drain capacitance from a small footprint; and high continuous wave (CW) output power-which requires a large footprint so as to dissipate heat.
Keywords :
frequency response; microwave field effect transistors; microwave power transistors; power field effect transistors; radar applications; semiconductor materials; silicon compounds; static induction transistors; 300 W; 700 W; L-band; RADAR applications; S-band; SiC; common source circuits; continuous wave SITs; footprint; frequency response; gate to drain capacitance; power density; pulsed power; static induction transistors; Capacitance; Circuits; Fingers; L-band; Power measurement; Pulse compression methods; Radar applications; Radio frequency; Silicon carbide; Testing;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806339
