Title :
Room temperature operation of a single electron switch with an electrically formed quantum dot
Author :
Dae Hwan Kim ; Dong-Hyuk Chae ; Jong Duk Lee ; Byung-Gook Park
Author_Institution :
Seoul Nat. Univ., South Korea
Abstract :
Single electron switch based on Coulomb blockade has recently attracted much attention as a candidate for the nanoelectronic device. Moreover, its application to the digital circuit has already been proposed as the SETL (Single Electron Transistor Logic). In this paper, we report the room temperature operation of single electron switches based on Coulomb blockade in a dual-gate MOSFET by further miniaturization of an electrical quantum dot.
Keywords :
Coulomb blockade; field effect transistor switches; semiconductor quantum dots; single electron transistors; Coulomb blockade; digital circuit; dual-gate MOSFET; electrical quantum dot; nanoelectronic device; room temperature operation; single electron switch; single electron transistor logic; Electrodes; Electrons; MOSFET circuits; Nanoelectronics; Quantum capacitance; Quantum dots; Switches; Temperature; US Department of Transportation; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806347
