Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

MOSFET memories based on Si nanocrystals have been considered as most promising application of silicon nano-devices in future VLSI. In the present paper, the charge storage characteristics of the devices with various channel dimensions are investigated in the temperature range of 20-300 K. Single charge charge/discharge processes are observed in the device with the narrowest channel. Furthermore, novel structures for improving the charge retention performance is discussed. In fabrication, narrow silicon channel was first fabricated on SOI substrate with various dimensions. Silicon nano-crystals were deposited at 580/spl deg/C in a LPCVD system, subsequently, an in-situ deposition of the gate SiO/sub 2/ layer was carried out. The gate, source and drain regions were formed using conventional MOS process. The temperature dependences of the I-V hysteresis characteristics are shown.