DocumentCode :
3336465
Title :
Observation of valence band electron emission from n-type silicon field emitter arrays
Author :
Meng Ding ; Han Kim ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear :
1999
fDate :
23-23 June 1999
Firstpage :
170
Lastpage :
171
Abstract :
We investigate the electron emission behavior of n-type Si field emitters in the presence of high applied voltages. Electron emission from the valence band of an n-type Si field emitter array is reported for the first time.
Keywords :
electron field emission; elemental semiconductors; field emission displays; silicon; vacuum microelectronics; valence bands; Si; applied voltage; field emitter arrays; valence band electron emission; Apertures; Electron emission; Electrostatics; Field emitter arrays; Laboratories; Low voltage; Microwave antenna arrays; Microwave technology; Sensor arrays; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
Type :
conf
DOI :
10.1109/DRC.1999.806360
Filename :
806360
Link To Document :
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