High transconductance 0.1 /spl mu/m Ge/Si/sub 0.4/Ge/sub 0.6/ Schottky-gated p-MODFETs

Summary form only given. In recent years, the enhanced electron and hole mobilities demonstrated in strained-layer Si/SiGe heterostructures have led to dramatic improvements in the dc and rf performance of modulation-doped field-effect transistors (MODFETs). The most dramatic advances have occurred in p-MODFETs, where high-speed, low-power devices have been fabricated that rival the performance of n-type devices. In the present work, we report the fabrication and characterization of self-aligned Ge-channel p-MODFETs that exhibit superior dc performance compared to previous alloy-channel and pure Ge-channel results reported to date.