• DocumentCode
    3336517
  • Title

    Cross-talk limits of highly segmented semiconductor detectors

  • Author

    Pullia, A. ; Weisshaar, D. ; Zocca, F. ; Bazzacco, D.

  • Author_Institution
    Ist. Naz. di Fis. Nucleare, Univ. of Milan, Milan, Italy
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1707
  • Lastpage
    1711
  • Abstract
    Cross-talk limits of monolithic highly-segmented semiconductor detectors for high-resolution X-gamma spectrometry are investigated. Cross-talk causes false signal components yielding amplitude losses and fold-dependent shifts of the spectral lines, which partially spoil the spectroscopic performance of the detector. Two complementary electrical models are developed, which describe quantitatively the interchannel cross-talk of monolithic segmented detectors whose electrodes are read out by charge-sensitive preamplifiers. The first is here designated as Cross-Capacitance (CC) model, the second as Split-Charge (SC) model. The CC model builds around the parasitic capacitances Cij linking the preamplifier outputs and the neighbor channel inputs. The SC model builds around the finite-value of the decoupling capacitance CC used to read out the high-voltage detector electrode. The key parameters of the models are individuated and ideas are shown to minimize their impact. Using a quasi-coaxial germanium segmented detector it is found that the SC cross-talk becomes negligible for decoupling capacitances larger than 1 nF, where instead the CC cross-talk tends to dominate. The residual cross-talk may be reduced by minimization of stray capacitances Cij, through a careful design of the layout of the Printed Circuit Board (PCB) where the input transistors are mounted. Cij can be made as low as ~5 fF, but it is shown that even in such case the impact of the CC cross-talk on the detector performance is not negligible. Finally, an algorithm for cross-talk correction is presented and elaborated.
  • Keywords
    X-ray spectrometers; nuclear electronics; semiconductor counters; charge-sensitive preamplifiers; cross-capacitance model; cross-talk correction; electrical models; fold-dependent shifts; high-resolution X-gamma spectrometry; high-voltage detector electrode; highly segmented semiconductor detectors; printed circuit board; spectral lines; split-charge model; Detectors; Electrodes; Germanium; Joining processes; Minimization; Parasitic capacitance; Performance loss; Preamplifiers; Printed circuits; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402224
  • Filename
    5402224