Title :
A novel sidewall strained-Si channel nMOSFET
Author :
Liu, K.C. ; Wang, X. ; Quinones, E. ; Chen, X. ; Chen, X.D. ; Kencke, D. ; Anantharam, B. ; Ray, S.K. ; Oswal, S.K. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We report on a new sidewall tensile-strained Si vertical nMOSFET without the use of a conventional relaxed SiGe buffer layer.
Keywords :
MOSFET; elemental semiconductors; silicon; Si; sidewall tensile-strained Si channel vertical n-MOSFET; Buffer layers; Charge carrier processes; Electron mobility; Germanium silicon alloys; Lattices; MOSFET circuits; Microelectronics; Silicon germanium; Strain control; Ultra large scale integration;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806364
