Title :
Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors
Author :
Rieh, J.-S. ; Bhattacharya, P.K. ; Croke, E.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Although there have been several theoretical calculations reported on the minority electron mobilities in p-type strained SiGe alloys, experimental data on such mobilities are lacking as their measurement is not straightforward. In this study, temperature-dependent minority electron mobilities in highly doped Si/sub 1-x/Ge/sub x/ (0.2/spl les/x/spl les/0.4) base layers of npn SiGe/Si heterostructure bipolar transistors have been measured for the first time.
Keywords :
Ge-Si alloys; electron mobility; heterojunction bipolar transistors; minority carriers; semiconductor materials; SiGe-Si; SiGe/Si npn heterojunction bipolar transistor; highly doped base layer; minority electron mobility; p-type strained SiGe alloy; temperature dependence; Cutoff frequency; Doping; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Magnetic field measurement; Magnetoresistance; Scattering; Silicon germanium; Temperature dependence;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806366
