DocumentCode
3336651
Title
Visible and infrared electroluminescence from Er-doped GaN Schottky diodes
Author
Steckl, A.J. ; Garter, M. ; Birkhahn, R.
Author_Institution
Nanoelectron. Lab., Cincinnati Univ., OH, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
200
Lastpage
201
Abstract
Room temperature visible light electroluminescence (EL) has been obtained for the first time from Er-doped GaN Schottky barrier diodes. The EL intensity for visible and IR light was found to increase linearly with bias current density. An external quantum efficiency of >0.1% has been measured under a reverse bias current of 3.85 mA.
Keywords
III-V semiconductors; Schottky diodes; current density; electroluminescence; erbium; gallium compounds; light emitting diodes; spectral line intensity; wide band gap semiconductors; 0.1 percent; 20 C; 3.85 mA; EL intensity; Er-doped GaN Schottky diodes; GaN:Er; IR light; Schottky barrier diodes; bias current density; external quantum efficiency; infrared electroluminescence; reverse bias current; room temperature; visible electroluminescence; Current density; Current measurement; Density measurement; Electroluminescence; Gallium nitride; Global warming; Indium tin oxide; Light emitting diodes; Schottky diodes; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806372
Filename
806372
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