Title :
Visible and infrared electroluminescence from Er-doped GaN Schottky diodes
Author :
Steckl, A.J. ; Garter, M. ; Birkhahn, R.
Author_Institution :
Nanoelectron. Lab., Cincinnati Univ., OH, USA
Abstract :
Room temperature visible light electroluminescence (EL) has been obtained for the first time from Er-doped GaN Schottky barrier diodes. The EL intensity for visible and IR light was found to increase linearly with bias current density. An external quantum efficiency of >0.1% has been measured under a reverse bias current of 3.85 mA.
Keywords :
III-V semiconductors; Schottky diodes; current density; electroluminescence; erbium; gallium compounds; light emitting diodes; spectral line intensity; wide band gap semiconductors; 0.1 percent; 20 C; 3.85 mA; EL intensity; Er-doped GaN Schottky diodes; GaN:Er; IR light; Schottky barrier diodes; bias current density; external quantum efficiency; infrared electroluminescence; reverse bias current; room temperature; visible electroluminescence; Current density; Current measurement; Density measurement; Electroluminescence; Gallium nitride; Global warming; Indium tin oxide; Light emitting diodes; Schottky diodes; Stimulated emission;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806372
